H27Q1T8PEA8R-BDG

Detailed Description:

The H27Q1T8PEA8R-BDG represents a substantial leap in NAND Flash memory technology, offering a massive 1Tb (terabit) of storage capacity. Manufactured by SK hynix, this Triple-Level Cell (TLC) NAND Flash chip belongs to the Memory category, specifically under the Flash Memory [NAND/NOR] subcategory. This product stands out due to its enormous storage capacity, enabling the storage of vast amounts of data in a compact form factor, which is particularly beneficial for applications in data centers, enterprise storage systems, and high-end consumer electronics. The use of TLC technology allows for storing three bits of data per cell, enhancing the chip’s storage density while maintaining a balance between performance, endurance, and cost. This makes the H27Q1T8PEA8R-BDG an ideal solution for devices and systems where high-capacity, high-speed storage is paramount. SK hynix’s reputation for innovation and quality is exemplified in this product, showcasing the company’s commitment to leading the push towards higher capacity storage solutions in the technology sector.